| PART |
Description |
Maker |
| BUZ60B |
4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| RFM12N40 RFM12N35 |
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs
12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| APT4016BN APT4018BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 400V 31.0A 0.16 Ohm / 400V 29.0A 0.18 Ohm
|
http://
Advanced Power Technology
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRF730 3009 |
N-Channel 400V-0.75惟-5.5A - TO-220 PowerMESHTM MOSFET(N娌?????MOSFET)
N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET
From old datasheet system
N - CHANNEL 400V - 0.75 - 5.5A - TO-220 PowerMESH TM MOSFET
N-Channel 400V-0.75Ω-5.5A - TO-220 PowerMESHTM MOSFET(N沟道功率MOSFET) N沟道400V -0.75Ω- 5.5A -20 PowerMESHTM MOSFET的（不适用沟道功率MOSFET的）
|
??????浣?
意法半导
STMicroelectronics N.V.
|
| IRF9620 FN2283 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| SFF430Z |
4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| IRF720 |
30V N-Channel PowerTrench MOSFET
3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
|
